features wide current range high voltage ratings up to 2400v high surge current capabilities stud cathode and stud anode version standard jedec types typical applications converters power supplies machine tool controls high power drives medium traction applications major ratings and characteristics 1600 to 2000 2400 i f(av) 200 200 a @ t c 110 110 c i f(rms) 314 314 a i fsm @ 50hz 4700 4700 a @ 60hz 4920 4920 a i 2 t@ 50hz 110 110 ka 2 s @ 60hz 101 101 ka 2 s v rrm range 1600 to 2000 2400 v t j - 40 to 180 150 c parameters sd200n/r units case style do-205ac (do-30) sd200n/r series standard recovery diodes stud version 1 bulletin i2080 rev. d 03/03 200a www.irf.com
sd200n/r series 2 www.irf.com bulletin i2080 rev. d 03/03 voltage v rrm , maximum repetitive v rsm , maximum non- i rrm max. type number code peak reverse voltage repetitive peak rev. voltage @ t j = t j max. vvma sd200n/r 16 1600 1700 15 20 2000 2100 24 2400 2500 electrical specifications voltage ratings i f(av) max. average forward current 200 a 180 conduction, half sine wave @ case temperature 110 c i f(av) max. average forward current 220 a 180 conduction, half sine wave @ case temperature 100 c i f(rms) max. rms forward current 314 a dc @ 95c case temperature i fsm max. peak, one-cycle forward, 4700 t = 10ms no voltage non-repetitive surge current 4920 t = 8.3ms reapplied 3950 t = 10ms 100% v rrm 4140 t = 8.3ms reapplied sinusoidal half wave, i 2 t maximum i 2 t for fusing 110 t = 10ms no voltage initial t j = t j max. 101 t = 8.3ms reapplied 78 t = 10ms 100% v rrm 71 t = 8.3ms reapplied i 2 t maximum i 2 t for fusing 1100 ka 2 s t = 0.1 to 10ms, no voltage reapplied v f(to)1 low level value of threshold voltage v f(to)2 high level value of threshold voltage r f 1 low level value of forward slope resistance r f 2 high level value of forward slope resistance v fm max. forward voltage drop 1.40 v i pk = 630a, t j = t j max, t p = 10ms sinusoidal wave parameter sd200n/r units conditions forward conduction ka 2 s a v m ? 0.64 (i > x i f(av) ),t j = t j max. 0.79 (16.7% x x i f(av) < i < x i f(av) ), t j = t j max. 1.00 (i > x i f(av) ),t j = t j max. 0.90 (16.7% x x i f(av) < i < x i f(av) ), t j = t j max.
sd200n/r series 3 www.irf.com bulletin i2080 rev. d 03/03 ? r thjc conduction (the following table shows the increment of thermal resistence r thjc when devices operate at different conduction angles than dc) 180 0.041 0.030 120 0.049 0.051 90 0.063 0.068 k/w t j = t j max. 60 0.093 0.096 30 0.156 0.157 conduction angle sinusoidal conduction rectangular conduction units conditions ordering information table sd 20 0 n 24 p c 1 2 3 4 5 6 7 device code 1 - diode 2 - essential part number 3 - 0 = standard recovery 4 - n = stud normal polarity (cathode to stud) r = stud reverse polarity (anode to stud) 5 - voltage code: code x 100 = v rrm (see voltage ratings table) 6 - p = stud base do-205ac (do-30) 1/2" 20unf-2a 7 - c = ceramic housing for metric device m12 x 1.75 contact factory 1600 to 2000 2400 t j max. junction operating temperature range -40 to 180 -40 to 150 c t stg max. storage temperature range -55 to 200 r thjc max. thermal resistance, junction to case 0.23 k/w dc operation r thcs max. thermal resistance, 0.08 mounting surface, smooth, flat and case to heatsink greased t max. allowed mounting torque 10% 14 nm not lubricated threads wt approximate weight 120 g case style do-205ac(do-30) see outline table sd200n/r thermal and mechanical specifications parameter units conditions
sd200n/r series 4 www.irf.com bulletin i2080 rev. d 03/03 outline table conforms to jedec do-205ac (do-30) all dimensions in millimeters (inches) fig. 2 - current ratings characteristics fig. 1 - current ratings characteristics 90 100 110 120 130 140 150 160 170 180 0 50 100 150 200 250 300 350 dc 30 60 90 120 180 conduction period maximum allowable case temperature (c) average forward current (a) sd200n/ r serie s r (dc) = 0.23 k/ w thjc 100 110 120 130 140 150 160 170 180 0 40 80 120 160 200 240 30 60 90 120 180 average forward current (a) conduction angle maximum allowable case temperature (c) sd200n/ r series r (dc) = 0.23 k/ w thjc * for metric device: m12 x 1.75 contact factory
sd200n/r series 5 www.irf.com bulletin i2080 rev. d 03/03 fig. 3 - forward power loss characteristics fig. 4 - forward power loss characteristics 20 40 60 80 100 120 140 160 180 maximum allowable ambient temperature (c) r = 0 . 0 8 k / w - d e l t a r t h s a 0 . 3 k / w 0 . 4 k / w 0 . 2 k / w 0 . 1 2 k / w 1 . 4 k / w 1 . 8 k / w 0 . 6 k / w 0 . 8 k / w 0 50 100 150 200 250 300 350 400 0 50 100 150 200 250 300 350 dc 180 120 90 60 30 rm s li m i t conduction period maximum average forward power loss (w) average forward current (a) sd200n/ r series t = t j max. j 20 40 60 80 100 120 140 160 180 maximum allowable ambient temperature (c) 0 . 3 k / w 0 . 4 k / w 0 . 2 k / w 0 . 1 2 k / w 1 . 4 k / w 1 . 8 k / w 0. 6 k / w 0 . 8 k / w r = 0 . 0 8 k / w - d e l t a r t hs a 0 50 100 150 200 250 300 0 50 100 150 200 250 180 120 90 60 30 rm s li m i t conduction angle maximum average forward power loss (w) average forward current (a) sd200n/ r series t = t j max. j fig. 5 - maximum non-repetitive surge current fig. 6 - maximum non-repetitive surge current 1000 1500 2000 2500 3000 3500 4000 4500 110100 numb er of eq ua l amp litud e ha lf cyc le current pulses (n) peak half sine wave forward current (a) i n i t i a l t = t j max. @ 60 hz 0.0083 s @ 50 hz 0.0100 s j sd200n/ r serie s at any rated load condition and with ra ted v ap plied following surg e. rrm 1000 1500 2000 2500 3000 3500 4000 4500 5000 0.01 0.1 1 pu lse tra in d u ra t io n ( s) peak half sine wave forward current (a) i n i t i a l t = t j max. no voltage reapplied rated v reapplied rrm ve rsus pulse tra in dura t io n. maximum non repetitive surge current j sd200n/ r series
sd200n/r series 6 www.irf.com bulletin i2080 rev. d 03/03 fig. 8 - thermal impedance z thjc characteristic fig. 7 - forward voltage drop characteristics 100 1000 10000 0.511.522.533.5 t = 2 5 c j instantaneous forward voltage (v) instantaneous forward current (a) sd 2 0 0 n / r se r i e s t = t j max. j 0.01 0.1 1 0.001 0.01 0.1 1 10 sq ua re wa ve pulse dura t io n (s) thjc transient thermal impedance z (k/w) steady state value: r = 0.23 k/ w (dc operation) thjc sd200n/ r series ir world headquarters: 233 kansas st., el segundo, california 90245, usa tel: (310) 252-7105 tac fax: (310) 252-7309 visit us at www.irf.com for sales contact information. 03/03 data and specifications subject to change without notice. this product has been designed and qualified for industrial level. qualification standards can be found on ir's web site.
|
